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| DT455N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.30 2.90 6.71 3.30 2.22 0.92 1.10 1.55 0.025 0.66 4.55 -- 10 0.254 10 Max 6.71 3.10 7.29 3.71 2.35 1.00 1.30 1.80 0.102 0.79 4.70 10 16 0.356 16 A B C D E G P H R S D CD G E J K D S G H J K L M N P R S L M N Mechanical Data * * SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above 25C unless otherwise specified Symbol VDSS VGSS Note 1a Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 30 20 11.5 40 3.0 1.3 1.1 -65 to +150 All Dimensions in mm Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Maximum Power Dissipation Characteristic Unit V V A W C Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1 Symbol RQJA RQJC Value 42 12 Unit C/W C/W Notes: 1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user's board design. 2 1a. With 1 in oz 2 oz. copper mounting pad RQJA = 42C/W. 2 1b. With 0.0066 in oz 2 oz. copper mounting pad RQJA = 95C/W. 2 1c. With 0.0123 in oz 2 oz. copper mounting pad RQJA = 110C/W. DS11609 Rev. C-4 1 of 4 DT455N Electrical Characteristics 25C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj =55C Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125C Static Drain-Source On-Resistance Tj = 125C On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS -- -- -- -- -- -- -- -- -- 1220 715 280 11 16 48 40 46 4.0 -- -- -- 20 30 80 70 61 -- -- 2.5 1.2 140 pF pF pF ns ns ns ns nC nC nC A V ns VGS = 0V, IS = 2.5A (Note 2) VGS = 0V, IF = 2.5A dlp/dt = 100 A/s VDS = 10V. ID = 11.5A. VGS = 10V VDD = 15V, ID = 1.0A VGEN = 10V, RGEN = 6.0W VDS = 15V, VGS = 0V f = 1.0MHz BVDSS IDSS IGSSF IGSSR VGS(th) RDS (ON) ID(ON) gFS 30 -- -- -- 1.0 0.7 -- 30 15 -- -- -- -- -- 1.5 0.9 0.013 0.019 0.018 -- 26 -- 1.0 10 100 -100 3.0 2.2 0.015 0.03 0.02 -- -- V A nA nA V W A m VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 11.5A VGS = 10V, ID = 11.5A VGS = 4.5V, ID = 10A VGS = 10V, VDS = 5.0V VGS = 4.5V, VDS = 5.0V VDS = 10V, ID = 11.5A Symbol Min Typ Max Unit Test Conditions SWITCHING CHARACTERISTICS (Note 2) tD(ON) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tr tD(OFF) tf Qg Qgs Qgd -- 11 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode IS -- -- Forward Current VSD Drain-Source Diode Forward Voltage -- 0.845 Reverse Recovery Time trr -- -- Notes: 2. Pulse Test: Pulse width l 300s, duty cycle l 2.0%. DS11609 Rev. C-4 2 of 4 DT455N VGS = 10V 6.0 4.5 4.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 2.5 VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) 32 5.0 3.5 2.0 4.0 24 1.5 4.5 5.0 6.0 16 3.0 8 1.0 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics 0.5 0 8 16 24 32 40 ID, DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Current 1.5 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 11.5A VGB = 10V 40 VDS = 10V TJ = -55 C 125 C 1.0 ID, DRAIN CURRENT (A) 1.25 30 25 C 20 0.75 10 0.5 -50 -25 0 25 50 75 100 125 150 0 0.8 1.6 2.4 3.2 4 T j , JUNCTION TEMPERATURE (C) Fig. 3, On-Resistance vs Temperature VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics DS11609 Rev. C-4 3 of 4 DT455N 30 10 R ( DS ) ON LIM IT 1m 10 10 0m s ms 10 s 0 s ID, DRAIN CURRENT (A) 1 dc 1s 10 s 0.1 VGS = 10V SINGLE PULSE RQJA = 42 C TA = 25 C 0.01 0.1 1 10 50 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area 1.0 D = 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) RQJA (t) = r(t) b RQJA RQJA = See Note 1c 0.01 Single Pulse t1 t2 TJ - TA = PPK b RQJA(t) Duty Cycle, D = t1/t2 0.001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 3000 t1, SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves DS11609 Rev. C-4 4 of 4 DT455N |
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